RF Transistors

92 RF Transistors from Qorvo meet your specification.
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  • Manufacturers: Qorvo
  • Technology: gan
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
46.53 dBm
Package Type:
Surface Mount
Power(W):
44.98 W
Gain:
22.3 dB
Supply Voltage:
48 to 55 V
Package:
4.0 x 3.0 mm
more info
Description:45W, 32V DC to 3.5 GHz, Earless GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
19 dB
Supply Voltage:
32 V
more info
QPD0009 Image
Description:15 dB, GaN on SiC Transistor from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
3.4 to 3.6 GHz
Power:
47 dBm
Package Type:
Surface Mount
Power(W):
50 W
Gain:
15 dB
Supply Voltage:
48 V
Package:
DFN
more info
Description:DC to 14 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
47.3 dBm
Package Type:
Die
Power(W):
53.7 W
Gain:
19.8 dB
Supply Voltage:
12 to 40 V
more info
Description:DC to 3.5 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.81 dBm
Package Type:
Flanged
Power(W):
47.97 W
Gain:
16 dB
Supply Voltage:
36 V
more info
Description:100W, DC to 3.5 GHz, GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50.29 dBm
Package Type:
Flanged
Power(W):
106.91 W
Gain:
14 dB
Supply Voltage:
28 V
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Package Type:
Surface Mount
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:15 W GaN RF Transistor from 0.03 to 1.215 GHz
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
30 MHz to 1.215 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
19 dB
Supply Voltage:
12 to 32 V
Package:
5 x 6 mm
more info
Description:DC to 14 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50.5 dBm
Package Type:
Die
Power(W):
112.2 W
Gain:
19.2 dB
Supply Voltage:
12 to 40 V
more info
Description:DC to 18 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 18 GHz
Power:
43 dBm
Package Type:
Die
Power(W):
19.95 W
Gain:
18 dB
Supply Voltage:
12 to 40 V
more info

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  • Manufacturers: Qorvo
  • Technology: gan

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