GaN Transistors - Page 6

750 GaN Transistors from 19 Manufacturers meet your specification.
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  • Technology: gan
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
17.1 dB
Supply Voltage:
48 V
Package:
RF12001KR3
more info
Description:120 W, GaN on SiC Power Transistor from 1 to 2 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 2 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
50 V
more info
Description:DC to 6 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
18 to 20 dB
Supply Voltage:
50 V
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Package Type:
Surface Mount
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:2 W GaN HEMT from DC to 26 GHz
Application Industry:
Test & Measurement, Commercial, Military
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
33.5 dBm
Package Type:
Chip
Power(W):
2 W
Supply Voltage:
28 V
more info
Description:5.2 to 5.9 GHz GaN HEMT Power Transistor for Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
5.2 to 5.9 GHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flanged Ceramic
more info
Description:10 W, GaN HEMT Transistor from 7.9 to 8.4 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.9 to 8.4 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
680B
more info
WG60028SF/P Image
Description:28 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
50 V
more info
Description:15 to 20 W, GaN HEMT Transistor form DC to 4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
0.1 dBm
Package Type:
Surface Mount
Power(W):
0.001 W
Supply Voltage:
50 V
more info
Description:15 W GaN RF Transistor from 0.03 to 1.215 GHz
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
30 MHz to 1.215 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
19 dB
Supply Voltage:
12 to 32 V
Package:
5 x 6 mm
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info

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  • Technology: gan

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