LDMOS Transistors

715 LDMOS Transistors from 6 Manufacturers meet your specification.

LDMOS Transistors are active semiconductor devices that are used to modify the properties of an input signal (used to amplify or switch). LDMOS Transistors from the leading manufacturers are listed below. Use the parametric search tools to narrow down on products by type, frequency, technology, power, gain, voltage and various other parameters. View product details, download datasheets and get quotes on matching products.

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  • Transistor Type: LDMOS
A3T18H400W23S Image
Description:71 W RF Power LDMOS Transistor from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
48.51 dBm
Package Type:
Chip
Power(W):
71 W
Gain:
16.8 to 17 dB
Supply Voltage:
28 V
more info
PD55015-E Image
Description:15 W, LDMOS / MOSFET RF Transistor from 480 to 520 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
480 to 520 MHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Supply Voltage:
12.5 to 15.5 V
more info
Description:450 W LDMOS FET from 960 to 1215 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
56.53 dBm
Power(W):
450 W (Peak)
Gain:
16.5 to 18 dB
Supply Voltage:
50 V
more info
AFT23H200-4S2L Image
Description:Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Supply Voltage:
28 V
Package:
NI-1230-4LS2L
more info
SD57045 Image
Description:45 W, LDMOS / FET RF Transistor from 925 to 965 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 965 MHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
45 W
Supply Voltage:
28 V
more info
LY2843V Image
Description:2 kW Push-Pull LDMOS Transistor from 88 to 108 MHz
Transistor Type:
LDMOS
CW/Pulse:
CW
Frequency:
88 to 108 MHz
Gain:
18 dB
Supply Voltage:
50 V
more info
A2T26H160-24S Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR, 2496 - 2690 MHz, 28 W AVG, 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L2L
more info
PD84006L-E Image
Description:6 W, LDMOS RF Transistor from 740 to 950 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
740 to 950 MHz
Power:
37.78 dBm
Power(W):
5 to 6 W
Supply Voltage:
7.5 to 9.5 V
more info
MMRF1306H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
60.97 dBm
Package Type:
Flanged
Power(W):
1250.26 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
Description:80 W, LDMOS RF Transistor from DC to 945 MHz
Application Industry:
Avionics, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 945 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
80 W
Supply Voltage:
28 V
more info

What are LDMOS Transistors?

LDMOS Transistors, or Laterally-Diffused Metal-Oxide-Semiconductor Transistors are a category of power transistors that are designed for high power RF applications. LDMOS transistors provide better power saturation capability and minimize distortion at higher power levels. These transistors also feature improved RF performance, ruggedness and reliability compared to GaAs Transistors. They are most often used in Wireless Infrastructure applications like base stations.

An RF Transistor is a semiconductor device that is used to amplify and switch electronic signals.

Important Parameters to consider in LDMOS Transistor:

  • Operating Frequency: This is the frequency range at which an LDMOS Transistor is fully functional or provides the best performance.
  • Output Power (W/dBm): It is the magnitude of power that the transistor will provide at the output after amplifying a signal.
  • Gain (dB): The gain of an LDMOS Transistor is the ratio of output to input power/amplitude. This is measured in dB.
  • Power/Drain Efficiency (%): Efficiency is a measure of how well a device converts one energy source to another. In case of a transistor drain efficiency is the ratio of output RF power to the input DC power.
  • Package Type: Based on the required application, the package type for the LDMOS transistor can be selected. There are a number of different package types available - Connectorized, Surface Mount, Die etc.

everything RF lists LDMOS Transistors from the leading manufacturers. Use the parametric search tools to narrow down on products based on your requirement. Once you find parts that meet your specification, download the data sheet, compare products and request quotations. Inquiries sent via everything RF are directed to the manufacturers who get back to you with a quote or information.

Click here to see the list of leading LDMOS transistor companies.

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