GaN Transistors - Page 4

750 GaN Transistors from 19 Manufacturers meet your specification.
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  • Technology: gan
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
19 W
Gain:
17.3 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
Description:25 W GaN Power Transistor from 30 to 4000 MHz
Application Industry:
Military, Wireless Infrastructure
Transistor Type:
DHEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 4 GHz
Power:
44 dBm
Package Type:
Surface Mount
Power(W):
25.11 W
Gain:
17.5 dB
Supply Voltage:
32 to 34 V
Package:
8 Pin QFN
more info
Description:DC to 14 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
47.3 dBm
Package Type:
Die
Power(W):
53.7 W
Gain:
19.8 dB
Supply Voltage:
12 to 40 V
more info
C4H10P800A Image
Description:800 W GaN Asymmetric Doherty Power Transistor from 600 to 1000 MHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
600 to 1000 MHz
Package Type:
Surface Mount
Power(W):
800 W
more info
Description:100 W GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50 dBm
Package Type:
Flanged
Power(W):
79.43 to 100 W
Supply Voltage:
27 V
Package:
GF-69
more info
Description:4 W, GaN HEMT Transistor from DC to 18 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 18 GHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
Package:
680B
more info
WG35165S Image
Description:165 W, GaN on SiC Power transistor from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Supply Voltage:
48 V
Package:
Flanged
more info
Description:Discrete Power GaN HEMT 50 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
47 dBm
Power(W):
50.12 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:20 W, GaN HEMT Transistor form DC to 6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
0.1 dBm
Package Type:
Die
Power(W):
0.001 W
Supply Voltage:
50 V
more info
Description:135 W GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
52.15 dBm
Package Type:
Die
Power(W):
164.06 W
Gain:
15.4 to 20.2 dB
Supply Voltage:
50 V
more info
Description:DC to 3.5 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.81 dBm
Package Type:
Flanged
Power(W):
47.97 W
Gain:
16 dB
Supply Voltage:
36 V
more info

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  • Technology: gan

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