GaN Transistors - Page 3

750 GaN Transistors from 19 Manufacturers meet your specification.
Selected Filters Reset All
  • Technology: gan
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Gain:
15.7 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
QPD0009 Image
Description:15 dB, GaN on SiC Transistor from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
3.4 to 3.6 GHz
Power:
47 dBm
Package Type:
Surface Mount
Power(W):
50 W
Gain:
15 dB
Supply Voltage:
48 V
Package:
DFN
more info
Description:180 W GaN on SiC HEMT from 2700 to 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
52.55 dBm
Package Type:
Earless Flanged
Power(W):
180 W
Gain:
15 dB
Supply Voltage:
50 V
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
44.77 to 46.43 dBm
Package Type:
Flanged
Power(W):
43.95 W
Gain:
16.4 dB
Supply Voltage:
42 V
Package:
Ceramic
more info
Description:100 W GaN HEMT Transistor from 5.3 to 5.8 GHz
Application Industry:
Broadcast, Military, Radar, SATCOM, Test & Measure...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.3 to 5.8 GHz
Power:
50.3 dBm (Psat)
Package Type:
4-Hole Flanged
Power(W):
107.15 W (Psat)
Supply Voltage:
48 V
more info
WG60014DD Image
Description:14 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Surface Mount
Power(W):
14 W
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 25 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
44 dBm
Power(W):
25.12 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-15GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
37.3 to 37.7 dBm (P5dB)
Package Type:
Die
Power(W):
5.37 W
Supply Voltage:
28 V
more info
Description:40 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
40 W
more info
Description:180 W GaN HEMT Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1.2 to 1.4 GHz
Power:
52 to 54 dBm (Psat)
Package Type:
Ceramic, 4-Hole Flanged
Power(W):
158.5 to 251.18 W (Psat)
Supply Voltage:
20 to 50 V
Package:
Hermatic Flange Ceramic
more info
Description:15 W GaN-on-SiC HEMT from DC to 8 GHz
Application Industry:
Radar, Test & Measurement, Communication, Wireless...
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
16 to 17 dB
Supply Voltage:
50 V
Package:
DFN 14 Lead
more info

Filters

Selected Filters Reset All
  • Technology: gan

Application Industry

Transistor Type

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type