GaN Transistors - Page 5

750 GaN Transistors from 19 Manufacturers meet your specification.
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  • Technology: gan
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
18.9 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:15 to 18.6 W, GaN HEMT Transistor from 7.8 to 8.2 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.8 to 8.2 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
18.62 W
Supply Voltage:
28 V
Package:
680B
more info
WGB01004050F Image
Description:50 W, GaN on SiC Power Transistor from 1 to 4 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 4 GHz
Power:
46.98 dBm
Package Type:
Flanged
Power(W):
49.89 W
Supply Voltage:
50 V
more info
Description:Discrete Power GaN HEMT 6 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
38 dBm
Power(W):
6.31 W
Gain:
10 to 20 dB
Supply Voltage:
28 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-6GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
45 to 46 dBm (P5dB)
Package Type:
Flanged
Power(W):
31.62 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:DC to 40 GHz Low Noise GaN on SiC pHEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaN on SiC, GaAs, GaN
CW/Pulse:
CW
Frequency:
DC to 40 GHz
Power:
24.47 dBm
Package Type:
Die, Chip
Power(W):
0.28 W
Gain:
8 to 14 dB
Supply Voltage:
3 V
more info
Description:100W, DC to 3.5 GHz, GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50.29 dBm
Package Type:
Flanged
Power(W):
106.91 W
Gain:
14 dB
Supply Voltage:
28 V
more info
Description:60-W, DC to 2700-MHz, 50-V, GaN HEMT for LTE and Pulse-Radar Applications
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 2.7 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Supply Voltage:
50 V
more info
Description:5200 to 5900 MHz, 15 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
31.76 dBm
Package Type:
Flanged
Power(W):
1.5 W
Gain:
15.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:25 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
48 V
Package:
680B
more info

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  • Technology: gan

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