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RF Transistors

84 RF Transistors from Sumitomo Electric Device Innovations meet your specification.
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  • Manufacturers: Sumitomo Electric Device Innovations
  • Technology: gan
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SGK5254-120A-R Image
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Sumitomo Electric Device Innovations - SGK5254-120A-R

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaN on SiC, GaN HEMT from 5.2 to 5.4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.4 GHz
Power:
551.5 dBm
Package Type:
Flanged
Power(W):
100 to 141.25 W
Gain:
15 to 16.5 dB
Supply Voltage:
24 V
more info
SGFCF15S-D Image
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Sumitomo Electric Device Innovations - SGFCF15S-D

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
39.5 dBm
Package Type:
Surface Mount
Power(W):
8.91 W
Supply Voltage:
50 V
more info
SGN31E030MK Image
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Sumitomo Electric Device Innovations - SGN31E030MK

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaN on SiC, GaN HEMT from 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.1 GHz
Power:
44 to 46 dBm
Package Type:
Flanged
Power(W):
25.12 to 39.81 W
Gain:
13 to 15 dB
Supply Voltage:
50 V
more info
EGN26C030MK Image
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Sumitomo Electric Device Innovations - EGN26C030MK

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
42 dBm
Package Type:
Flanged
Power(W):
15.85 W
Supply Voltage:
50 V
more info
SGK7785-30A Image
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Sumitomo Electric Device Innovations - SGK7785-30A

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaN on SiC, GaN HEMT from 7.7 to 8.5 GHz
Application Industry:
SATCOM, Wireless Infrastructure, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
7.7 to 8.5 GHz
Power:
44 to 45 dBm
Package Type:
Flanged
Power(W):
25.12 to 31.62 W
Gain:
11 to 12 dB
Supply Voltage:
24 V
more info
SGNE010MK Image
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Sumitomo Electric Device Innovations - SGNE010MK

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaN on SiC, GaN HEMT from 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.5 GHz
Power:
39 to 40.5 dBm
Package Type:
Flanged
Power(W):
7.94 to 11.22 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
SGK1011-25A Image
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Sumitomo Electric Device Innovations - SGK1011-25A

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaN on SiC, GaN HEMT from 10.7 to 11.7 GHz
Application Industry:
SATCOM, Wireless Infrastructure, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
10.7 to 11.7 GHz
Power:
43 to 44 dBm
Package Type:
Flanged
Power(W):
19.95 to 25.12 W
Gain:
9 to 10 dB
Supply Voltage:
24 V
more info
SGK7785-60A Image
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Sumitomo Electric Device Innovations - SGK7785-60A

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaN on SiC, GaN HEMT from 7.7 to 8.5 GHz
Application Industry:
SATCOM, Communication, Wireless Infrastructure, Br...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
7.7 to 8.5 GHz
Power:
47 to 48 dBm
Package Type:
Flanged
Power(W):
50.12 to 63.1 W
Gain:
9.5 to 11 dB
Supply Voltage:
24 V
more info
EGN21C210I2D Image
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Sumitomo Electric Device Innovations - EGN21C210I2D

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
SGN3035-150H-R Image
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Sumitomo Electric Device Innovations - SGN3035-150H-R

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaN on SiC, GaN HEMT from 3 to 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3 to 3.5 GHz
Power:
51.8 to 52.8 dBm
Package Type:
Flanged
Power(W):
151.36 to 190.55 W
Supply Voltage:
50 V
more info
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  • Manufacturers: Sumitomo Electric Device Innovations
  • Technology: gan

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