RF Transistors

92 RF Transistors from Integra Technologies, Inc. meet your specification.
Selected Filters Reset All
  • Manufacturers: Integra Technologies, Inc.
  • Technology: gan
Description:5200 to 5900 MHz, 14 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
12 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
44.77 to 46.43 dBm
Package Type:
Flanged
Power(W):
43.95 W
Gain:
16.4 dB
Supply Voltage:
42 V
Package:
Ceramic
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:5200 to 5900 MHz, 15 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
31.76 dBm
Package Type:
Flanged
Power(W):
1.5 W
Gain:
15.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:5.2 to 5.9 GHz GaN HEMT Power Transistor for Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
5.2 to 5.9 GHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flanged Ceramic
more info
Description:L-Band Radar Transistor from 1.03 to 1.09 GHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
0 to 50.79 dBm
Package Type:
Flanged
Power(W):
120 W
Gain:
20 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:420 to 450 MHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
420 to 450 MHz
Power:
52.04 dBm
Package Type:
Flanged
Power(W):
159.96 W
Gain:
22 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:5.2 to 5.9 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
33.98 dBm
Package Type:
Flanged
Power(W):
2.5 W
Gain:
13 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
40.79 to 42.55 dBm
Package Type:
Flanged
Power(W):
17.99 W
Gain:
16.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:135 Watts GaN on SiC Transistor for S-Band Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
51.3 dBm
Package Type:
Flanged
Power(W):
134.9 W
Gain:
13.5 dB
Supply Voltage:
46 V
Package:
Ceramic
more info

Filters

Selected Filters Reset All
  • Manufacturers: Integra Technologies, Inc.
  • Technology: gan

Application Industry

Transistor Type

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type