GaN on Si Transistors

52 GaN on Si Transistors from 2 Manufacturers meet your specification.

GaN on Si Transistors are active semiconductor devices that are used to modify the properties of an input signal (used to amplify or switch). GaN on Si Transistors from the leading manufacturers are listed below. Use the parametric search tools to narrow down on products by type, frequency, technology, power, gain, voltage and various other parameters. View product details, download datasheets and get quotes on matching products.

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  • Technology: GaN on Si
Description:14 W GaN Power Transistor from 30 MHz to 2.7 GHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 2.7 GHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.1 W
Gain:
13.5 to 18 dB
Supply Voltage:
12 to 34 V
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
NPT2024 Image
Description:DC to 2.7 GHz GaN on Si Wideband Transistor
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
20 MHz to 3 GHz
Power:
47.24 dBm
Package Type:
Flanged
Power(W):
52.97 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
TO272
more info
Description:DC to 3.5 GHz, HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
DC to 3.5 GHz
Power:
46.53 dBm
Package Type:
Die
Power(W):
44.98 W
Gain:
12 dB
Supply Voltage:
28 V
more info
Description:3.3 to 3.8 GHz, HEMT Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.3 to 3.8 GHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:15 W, GaN on Si Transistor from 10 MHz to 2.7 GHz
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description:DC to 3.5 GHz, HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
DC to 3.5 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
14 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:DC to 3 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3 GHz
Package Type:
Surface Mount
Gain:
14 dB
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:45 Watt GaN on Silicon RF Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
46.53 dBm (p3dB)
Package Type:
Surface Mount
Power(W):
44.98 W (p3dB)
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:50 W GaN on Silicon Transistor for RF Energy Applications
Application Industry:
RF Energy, Wireless Communication, Radar
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
46.99 dBm
Package Type:
Surface Mount
Power(W):
50 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-2
more info

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  • Technology: GaN on Si

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