RF Transistors - Pulse

1202 RF Transistors from 19 Manufacturers meet your specification.
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  • CW/Pulse: Pulse
Description:800 W GaN Power Transistor from 1930 to 1995 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1930 to 1995 MHz
Package Type:
Flanged
Supply Voltage:
52 V
more info
A3T18H400W23S Image
Description:71 W RF Power LDMOS Transistor from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
48.51 dBm
Package Type:
Chip
Power(W):
71 W
Gain:
16.8 to 17 dB
Supply Voltage:
28 V
more info
Description:960 MHz to 1.21 GHz, 150 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Gain:
20 dB
Supply Voltage:
50 V
more info
Description:1.5 kW GaN Power Transistor from 2.4 to 2.5 GHz for Medical Applications
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.4 to 2.5 GHz
Power:
61.76 dBm
Package Type:
Flanged
Power(W):
1500 W
Gain:
14 to 17 dB
Supply Voltage:
100 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:150 W GaN HEMT from 1 to 1.4 GHz
Application Industry:
SATCOM, Avionics, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
51.4 to 51.76 dBm
Package Type:
Surface Mount
Power(W):
141 to 150 W
Gain:
15.2 to 15.7 dB
Supply Voltage:
50 V
Package:
6-Pin DFN
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
T12
more info
Description:15 W GaN-on-SiC HEMT from DC to 8 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 8 GHz
Power:
39.5 to 41.4 dBm
Package Type:
Surface Mount
Power(W):
8.9 to 13.8 W
Gain:
11 to 21.9 dB
Supply Voltage:
28 V & 50 V
Package:
QFN-16
more info
Description:45W, 32V DC to 3.5 GHz, Earless GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description:450 W LDMOS FET from 960 to 1215 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
56.53 dBm
Power(W):
450 W (Peak)
Gain:
16.5 to 18 dB
Supply Voltage:
50 V
more info

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