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RF Transistors

33 RF Transistors from WAVICE meet your specification.
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  • Manufacturers: WAVICE
  • Technology: gan
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WGB01006020F-LV Image
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WAVICE - WGB01006020F-LV

RF Transistor from WAVICE
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Description:20 W, GaN on SiC Power Transistor from 1 to 6 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 6 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
28 V
more info
WG60005SF/P Image
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WAVICE - WG60005SF/P

RF Transistor from WAVICE
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Description:5 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.98 dBm
Package Type:
Flanged
Power(W):
4.99 W
Supply Voltage:
50 V
more info
WG60014DD Image
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WAVICE - WG60014DD

RF Transistor from WAVICE
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Description:14 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Surface Mount
Power(W):
14 W
Supply Voltage:
28 V
more info
WG35165S Image
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WAVICE - WG35165S

RF Transistor from WAVICE
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Description:165 W, GaN on SiC Power transistor from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Supply Voltage:
48 V
Package:
Flanged
more info
WGB01004050F Image
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WAVICE - WGB01004050F

RF Transistor from WAVICE
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Description:50 W, GaN on SiC Power Transistor from 1 to 4 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 4 GHz
Power:
46.98 dBm
Package Type:
Flanged
Power(W):
49.89 W
Supply Voltage:
50 V
more info
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WAVICE - WGB01002120F

RF Transistor from WAVICE
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Description:120 W, GaN on SiC Power Transistor from 1 to 2 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 2 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
50 V
more info
WG60028SF/P Image
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WAVICE - WG60028SF/P

RF Transistor from WAVICE
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Description:28 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
50 V
more info
WG60002SF/P Image
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WAVICE - WG60002SF/P

RF Transistor from WAVICE
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Description:2 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
28 V
more info
WG18200SP Image
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WAVICE - WG18200SP

RF Transistor from WAVICE
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Description:200 W, GaN on SiC Power Transistor from 1.805 to 1.88 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
more info
WG028031350I Image
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WAVICE - WG028031350I

RF Transistor from WAVICE
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Description:350 W, GaN on SiC Power Transistor from 2.8 to 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.8 to 3.1 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Supply Voltage:
50 V
more info
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  • Manufacturers: WAVICE
  • Technology: gan

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