RF Transistors

10 RF Transistors from Gallium Semiconductor meet your specification.
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  • Manufacturers: Gallium Semiconductor
  • Technology: gan
Description:150 W GaN HEMT from 1 to 1.4 GHz
Application Industry:
SATCOM, Avionics, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
51.4 to 51.76 dBm
Package Type:
Surface Mount
Power(W):
141 to 150 W
Gain:
15.2 to 15.7 dB
Supply Voltage:
50 V
Package:
6-Pin DFN
more info
Description:15 W GaN-on-SiC HEMT from DC to 8 GHz
Application Industry:
Radar, Test & Measurement, Communication, Wireless...
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
16 to 17 dB
Supply Voltage:
50 V
Package:
DFN 14 Lead
more info
Description:135 W GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
52.15 dBm
Package Type:
Die
Power(W):
164.06 W
Gain:
15.4 to 20.2 dB
Supply Voltage:
50 V
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info
Description:20 W GaN on SiC HEMT from DC to 7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 7 GHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Gain:
15.2 to 17.2 dB
Supply Voltage:
50 V
more info
Description:30 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
46.99 dBm
Package Type:
Die
Power(W):
50 W
Gain:
14.5 to 16.2 dB
Supply Voltage:
50 V
more info
Description:90 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.41 dBm
Package Type:
Die
Power(W):
109.9 W
Gain:
14 to 15.5 dB
Supply Voltage:
50 V
more info
Description:10 W GaN on SiC HEMT from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Gain:
16.5 to 17.8 dB
Supply Voltage:
50 V
more info
Description:80 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Radar, Test & Measurement, Communication, Wireless...
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Gain:
15.1 to 17.2 dB
Supply Voltage:
50 V
Package:
DFN
more info
Description:60 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
49.03 dBm
Package Type:
Die
Power(W):
79.98 W
Gain:
14.5 to 16 dB
Supply Voltage:
50 V
more info

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  • Manufacturers: Gallium Semiconductor
  • Technology: gan

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