RF Transistors - Aerospace & Defence

771 RF Transistors from 13 Manufacturers meet your specification.
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  • Application Industry: Aerospace & Defence
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
28.5 dBm
Package Type:
Chip
Power(W):
0.71 W
Gain:
7 to 11 dB
Supply Voltage:
8 V
more info
Description:960 MHz to 1.21 GHz, 150 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Gain:
20 dB
Supply Voltage:
50 V
more info
WGB01006020F-LV Image
Description:20 W, GaN on SiC Power Transistor from 1 to 6 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 6 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:45W, 32V DC to 3.5 GHz, Earless GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
27.5 dBm
Package Type:
Chip
Power(W):
0.56 W
Gain:
7.5 to 12 dB
Supply Voltage:
8 V
more info
WG60005SF/P Image
Description:5 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.98 dBm
Package Type:
Flanged
Power(W):
4.99 W
Supply Voltage:
50 V
more info
Description:Discrete Power GaN HEMT 12 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
41 dBm
Power(W):
12.59 W
Gain:
10 to 20 dB
Supply Voltage:
28 V
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
41.76 to 42.79 dBm
Package Type:
Die
Power(W):
19.01 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
28 dBm
Package Type:
Chip
Power(W):
0.63 W
Gain:
7.2 to 11.2 dB
Supply Voltage:
6 to 8 V
more info

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  • Application Industry: Aerospace & Defence

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