GaN Transistors - Page 10

750 GaN Transistors from 19 Manufacturers meet your specification.
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  • Technology: gan
Description:GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
53.77 to 54.05 dBm
Package Type:
Surface Mount
Power(W):
238.4 to 254.1 W
Gain:
13.1 to 13.8 dB
Supply Voltage:
52 Vdc
more info
Description:90 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.41 dBm
Package Type:
Die
Power(W):
109.9 W
Gain:
14 to 15.5 dB
Supply Voltage:
50 V
more info
Description:DC to 6 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
14 dB
Supply Voltage:
12 to 40 V
more info
Description:15-W, 3300 to 3900-MHz, 28-V, GaN HEMT for WiMAX
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.3 to 3.9 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
50 V
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
40.79 to 42.55 dBm
Package Type:
Flanged
Power(W):
17.99 W
Gain:
16.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
42 dBm
Package Type:
Flanged
Power(W):
15.85 W
Supply Voltage:
50 V
more info
Description:8 W GaN HEMT Transistor from DC to 18 GHz
Application Industry:
Radar, SATCOM, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 18 GHz
Power:
36.02 dBm
Package Type:
Ceramic, 2-Hole Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
more info
WG21200SP Image
Description:200 W, GaN on SiC Power Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
more info
Description:10 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info
Description:1.2 to 1.4 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Supply Voltage:
45 V
more info
Description:15 W, GaN Transistor from 50 to 3500 MHz
Technology:
GaN
CW/Pulse:
CW
Frequency:
50 to 3500 MHz
Power:
41.76 dBm
Package Type:
Ceramic
Power(W):
15 W
Supply Voltage:
50 V
more info

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