GaN Transistors - Page 7

750 GaN Transistors from 19 Manufacturers meet your specification.
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  • Technology: gan
Description:550 W GaN Power Transistor from 1295 to 1305 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1295 to 1305 MHz
Power:
57.4 dBm
Package Type:
Flanged
Power(W):
550 W
Supply Voltage:
50 V
more info
Description:L-Band Radar Transistor from 1.03 to 1.09 GHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
0 to 50.79 dBm
Package Type:
Flanged
Power(W):
120 W
Gain:
20 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:18.8 W, GaN HEMT Transistor from 6.95 to 7.45 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
6.95 to 7.45 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
18.62 W
Supply Voltage:
28 V
Package:
680B
more info
WG60002SF/P Image
Description:2 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
28 V
more info
CHKA011aSXA Image
Description:150 W GaN Transistor from DC to 1.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 1.5 GHz
Power:
51.14 dBm
Package Type:
Flanged
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info
Description:30 Watts, 50 Volts, 128µs, 10% 1030-1090MHz
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
44.77 to 45.44 dBm
Package Type:
Die
Power(W):
34.99 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:DC to 14 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50.5 dBm
Package Type:
Die
Power(W):
112.2 W
Gain:
19.2 dB
Supply Voltage:
12 to 40 V
more info
Description:420 to 450 MHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
420 to 450 MHz
Power:
52.04 dBm
Package Type:
Flanged
Power(W):
159.96 W
Gain:
22 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
39.5 dBm
Package Type:
Surface Mount
Power(W):
8.91 W
Supply Voltage:
50 V
more info
Description:4 W, GaN HEMT Transistor from DC to 18 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 18 GHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
Package:
680B
more info

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  • Technology: gan

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