RF Transistors - ISM

394 RF Transistors from 11 Manufacturers meet your specification.
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  • Application Industry: ISM
Description:100 W GaN-on-SiC Transistor from 2400 to 2500 MHz
Application Industry:
Test & Measurement, ISM
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
50.4 to 51 dBm
Package Type:
Flanged
Power(W):
110 to 127 W
Supply Voltage:
52 V
Package:
NS-AS01
more info
Description:16 W GaN-on-SiC Transistor from DC to 8 GHz
Application Industry:
Avionics, ISM, Military, Radar
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
42.1 to 43.1 dBm
Package Type:
Surface Mount
Power(W):
16.2 to 20.4 W
Gain:
14.1 to 15.1 dB
Supply Voltage:
28 V
Package:
12-Lead PDFN
more info
Description:NPN RF Bipolar Transistor for Wireless Applications up to 6 GHz
Application Industry:
ISM, Broadcast, Wireless Infrastructure, Wireless ...
Transistor Type:
Bipolar
Technology:
SiGe
Frequency:
DC to 6 GHz
Package Type:
Flanged
more info
Description:Surface Mount High Linearity Silicon NPN RF Bipolar Transistor
Application Industry:
Wireless Infrastructure, ISM, Wireless Communicati...
Transistor Type:
Bipolar
Technology:
SiGe
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
14.5 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.3 V
Package:
SOT343
more info
Description:300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Package Type:
Surface Mount
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
30 to 500 MHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:RF Bipolar Transistor from DC to 12 GHz
Application Industry:
ISM, Radar, GNSS, Wireless Infrastructure, Wireles...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
DC to 12 GHz
Power:
11 dBm
Package Type:
Surface Mount
Power(W):
0.0126 W
Gain:
24.5 dB
Supply Voltage:
3 V
more info
Description:2.5 kW LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Wireless Infrastructure, ISM, Broadcast, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Package Type:
Flanged
Gain:
28.5 to 29.8 dB
Supply Voltage:
75 V
more info
Description:180 W, LDMOS RF Transistor from 1.3 to 1.6 GHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.3 to 1.6 GHz
Power:
52.553 dBm
Package Type:
Flanged
Power(W):
180 W
Supply Voltage:
28 V
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.76 dBm
Package Type:
Die
Power(W):
149.97 W
Supply Voltage:
125 V
Package:
TO-247CS
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
8.5 dB
Supply Voltage:
33 V
Package:
Flange Ceramic
more info

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  • Application Industry: ISM

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