RF Transistors

87 RF Transistors from WAVEPIA Co,. Ltd. meet your specification.
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  • Manufacturers: WAVEPIA Co,. Ltd.
  • Technology: gan
Description:60 W GaN HEMT Operates up to 7 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 7 GHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
59.98 W
Supply Voltage:
28 V
more info
Description:25 W Unmatched GaN Transistor from DC to 5 GHz
Application Industry:
Cellular, Radar, Test & Measurement, Wi-Fi / Bluet...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 5 GHz
Power:
43.98 to 45.4 dBm
Package Type:
Surface Mount, 2-Hole Flanged
Power(W):
25 to 34.67 W (Psat)
Supply Voltage:
28 V
more info
Description:100 W GaN HEMT Transistor from 5.3 to 5.8 GHz
Application Industry:
Broadcast, Military, Radar, SATCOM, Test & Measure...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.3 to 5.8 GHz
Power:
50.3 dBm (Psat)
Package Type:
4-Hole Flanged
Power(W):
107.15 W (Psat)
Supply Voltage:
48 V
more info
Description:4 W, GaN HEMT Transistor from DC to 18 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 18 GHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
Package:
680B
more info
Description:15 to 18.6 W, GaN HEMT Transistor from 7.8 to 8.2 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.8 to 8.2 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
18.62 W
Supply Voltage:
28 V
Package:
680B
more info
Description:25 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
48 V
Package:
680B
more info
Description:10 W, GaN HEMT Transistor from 7.9 to 8.4 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.9 to 8.4 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
680B
more info
Description:18.8 W, GaN HEMT Transistor from 6.95 to 7.45 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
6.95 to 7.45 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
18.62 W
Supply Voltage:
28 V
Package:
680B
more info
Description:4 W, GaN HEMT Transistor from DC to 18 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 18 GHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
Package:
680B
more info
Description:19 W, GaN HEMT Transistor from 9.2 to 9.6 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
9.2 to 9.6 GHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
19.95 W
Supply Voltage:
28 V
Package:
680B
more info

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  • Manufacturers: WAVEPIA Co,. Ltd.
  • Technology: gan

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