RF Transistors - Wireless Infrastructure

1491 RF Transistors from 25 Manufacturers meet your specification.
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  • Application Industry: Wireless Infrastructure
Description:56.2 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
40 dBm
Package Type:
Surface Mount, Flanged
Power(W):
10 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
46.53 dBm
Package Type:
Surface Mount
Power(W):
44.98 W
Gain:
22.3 dB
Supply Voltage:
48 to 55 V
Package:
4.0 x 3.0 mm
more info
C5H3438N110D Image
Description:110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
56.02 dBm
Package Type:
Surface Mount
Power(W):
110 W (P5dB)
Package:
QFN
more info
A3T18H400W23S Image
Description:71 W RF Power LDMOS Transistor from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
48.51 dBm
Package Type:
Chip
Power(W):
71 W
Gain:
16.8 to 17 dB
Supply Voltage:
28 V
more info
Description:520 MHz, 6.5 W Silicon Power MOSFET for VHF/UHF Radio Applications
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
CW/Pulse:
CW
Frequency:
520 MHz
Power:
38.13 dBm
Package Type:
Surface Mount
Power(W):
6.5 W
more info
Description:NPN RF Bipolar Transistor for Wireless Applications up to 6 GHz
Application Industry:
ISM, Broadcast, Wireless Infrastructure, Wireless ...
Transistor Type:
Bipolar
Technology:
SiGe
Frequency:
DC to 6 GHz
Package Type:
Flanged
more info
Description:15 W GaN High Electron Mobility Transistor from DC to 6 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement, Wireless In...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Package:
SMT
more info
PD55015-E Image
Description:15 W, LDMOS / MOSFET RF Transistor from 480 to 520 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
480 to 520 MHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Supply Voltage:
12.5 to 15.5 V
more info
WGB01006020F-LV Image
Description:20 W, GaN on SiC Power Transistor from 1 to 6 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 6 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
34 dBm
Package Type:
Surface Mount
Power(W):
2.51 W
Supply Voltage:
7 V
Package:
Ceramic
more info

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  • Application Industry: Wireless Infrastructure

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