GaN Transistors - Page 8

750 GaN Transistors from 19 Manufacturers meet your specification.
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  • Technology: gan
IE18385D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.85 dBm
Package Type:
Flanged
Power(W):
384.59 W
Gain:
15.1 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
WG18200SP Image
Description:200 W, GaN on SiC Power Transistor from 1.805 to 1.88 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
more info
Description:1.2 to 1.4 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
52.55 dBm
Package Type:
Flanged, Ceramic
Power(W):
180 W
Supply Voltage:
45 V
more info
Description:DC to 18 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 18 GHz
Power:
43 dBm
Package Type:
Die
Power(W):
19.95 W
Gain:
18 dB
Supply Voltage:
12 to 40 V
more info
Description:5.2 to 5.9 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
33.98 dBm
Package Type:
Flanged
Power(W):
2.5 W
Gain:
13 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:19 W, GaN HEMT Transistor from 9.2 to 9.6 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
9.2 to 9.6 GHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
19.95 W
Supply Voltage:
28 V
Package:
680B
more info
WG028031350I Image
Description:350 W, GaN on SiC Power Transistor from 2.8 to 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.8 to 3.1 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Supply Voltage:
50 V
more info
Description:15 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
41.7 dBm
Package Type:
Flanged
Power(W):
15 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
3 Lead hermetic Ceramic-Metal Flange Package
more info
Description:20 W GaN on SiC HEMT from DC to 7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 7 GHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Gain:
15.2 to 17.2 dB
Supply Voltage:
50 V
more info
Description:1.8 to 2.4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.4 GHz
Power:
53.42 dBm
Package Type:
Flanged
Power(W):
219.79 W
Gain:
24 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.1 GHz
Power:
44 to 46 dBm
Package Type:
Flanged
Power(W):
25.12 to 39.81 W
Gain:
13 to 15 dB
Supply Voltage:
50 V
more info

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  • Technology: gan

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