The GRF0010 from Guerrilla RF is a GaN-on-SiC HEMT Transistor that operates from DC to 8 GHz. It delivers a saturated output power of 15 W with a small signal gain of 15 dB and a drain efficiency of 62%. This transistor operates over a wide bandwidth and supports both linear and pulsed operations. It requires an operating drain voltage of 28 or 50 V and consumes 15 mA of quiescent drain current. This RoHS-compliant HEMT is available in a 16-lead QFN package that measures 3 x 3 mm. It is ideal for satellite communications, medical imaging, broadcast transmitters, distributed antenna systems, repeaters, and 5G base station applications.
